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PD - 94452
HEXFET(R) Power MOSFET
l
IRFR3418 IRFU3418
ID
30A
Applications High frequency DC-DC converters
VDSS
80V
RDS(on) Max
14m:
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
D-Pak IRFR3418
I-Pak IRFU3418
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
80 20 70h 50 280 140 3.8 0.95 5.2 -55 to + 175
Units
V
c
A W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
e
W/C V/ns C
Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB Mount) * Junction-to-Ambient
Typ.
--- --- ---
Max.
1.05 40 110
Units
C/W
Notes through are on page 10
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1
09/12/02
IRFR/U3418
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
80 --- --- 3.5 --- --- --- --- --- 0.08 11.5 --- --- --- --- --- --- --- 14 5.5 1.0 250 100 -100 nA V m V A
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 18A VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V
V/C Reference to 25C, ID = 1mA
f
VDS = VGS, ID = 250A
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
66 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 63 23 23 24 72 41 27 3510 330 190 1220 240 360 --- 94 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = 18A VDS = 40V VGS = 10V VDD = 40V ID = 18A RG = 6.8 VGS = 10V VGS = 0V VDS = 25V
Conditions
VDS = 25V, ID = 18A
f f
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 64V, = 1.0MHz VGS = 0V, VDS = 0V to 64V
e
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energydh Avalanche CurrentA Typ. --- --- Max. 260 18 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ah Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 57 130 70 280 1.3 --- --- V ns nC A
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 18A, VGS = 0V
f
TJ = 150C, IF = 18A, VDD = 25V di/dt = 100A/s
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3418
1000
TOP VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V 6.0V
1000
TOP VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V 6.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1
10
6.0V
1
0.1
6.0V
0.01
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 1000 0.1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100 1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.5
ID = 70A
100.00
T J = 175C
10.00
1.00
T J = 25C
0.10
VDS = 25V 20s PULSE WIDTH
0.01 5 6 7 8 9 10 11 12 13 14 15
RDS(on), Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
2.0
1.5
1.0
0.5
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U3418
100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
12.0 ID= 18A
VGS , Gate-to-Source Voltage (V)
10.0
10000
VDS= 64V VDS= 40V VDS= 16V
C, Capacitance(pF)
Ciss
1000
8.0
6.0
Coss Crss
100
4.0
2.0
10 1 10 100
0.0 0 10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.00
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00 T J = 175C 10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100 100sec 10 1msec 1 TC = 25C Tj = 175C Single Pulse 0.1 10msec
1.00
T J = 25C
VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V)
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR/U3418
80
V DS
LIMITED BY PACKAGE
RD
VGS RG VGS
D.U.T.
+
ID , Drain Current (A)
60
-VDD
40
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 PDM t1 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3418
600
15V
EAS, Single Pulse Avalance Energy (mJ)
TOP
500
VDS
L
DRIVER
BOTTOM
ID 7.3A 13A 18A
400
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
300
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
200
100
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U3418
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRFR/U3418
TO-251AA (I-Pak) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 1.52 (.060) 1.15 (.045) 1 -B2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 6.22 (.245) 5.97 (.235) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
3X
1.14 (.045) 0.76 (.030)
3X
0.89 (.035) 0.64 (.025) M AMB
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
2.28 (.090) 2X
0.25 (.010)
TO-251AA (I-Pak) Part Marking Information
EXAMPLE: THIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN THE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRF U120 919A 78 56
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
AS SEMBLY LOT CODE
8
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IRFR/U3418
TO-252AA (D-Pak) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094) 2.19 (.086)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 1.27 (.050) 0.88 (.035)
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).
0.58 (.023) 0.46 (.018)
2.28 (.090)
TO-252AA (D-Pak) Part Marking Information
EXAMPLE: THIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRF U120 12 916A 34
AS SEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
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9
IRFR/U3418
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 1.6mH RG = 25, IAS = 18A. ISD 18A, di/dt 350A/s, VDD V(BR)DSS, TJ 175C.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/02
10
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